Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches
Abstract
An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
- Inventors:
- Issue Date:
- Research Org.:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1082853
- Patent Number(s):
- 8354290
- Application Number:
- 13/080,255
- Assignee:
- UChicago Argonne, LLC (Argonne, IL)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01H - ELECTRIC SWITCHES
- DOE Contract Number:
- ACO2-06CH11357
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches. United States: N. p., 2013.
Web.
Sumant, Anirudha V., Auciello, Orlando H., & Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches. United States.
Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Tue .
"Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches". United States. https://www.osti.gov/servlets/purl/1082853.
@article{osti_1082853,
title = {Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches},
author = {Sumant, Anirudha V. and Auciello, Orlando H. and Mancini, Derrick C.},
abstractNote = {An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 15 00:00:00 EST 2013},
month = {Tue Jan 15 00:00:00 EST 2013}
}
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