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Title: RF-MEMS capacitive switches with high reliability

Abstract

A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Inventors:
; ; ; ; ; ; ; ;
Issue Date:
Research Org.:
UChicago Argonne, LLC, Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1092767
Patent Number(s):
8,525,185
Application Number:
13/081,683
Assignee:
UChicago Argonne, LLC (Argonne, IL)
DOE Contract Number:  
FG02-02ER46016
Resource Type:
Patent
Resource Relation:
Patent File Date: 2011 Apr 07
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Goldsmith, Charles L., Auciello, Orlando H., Carlisle, John A., Sampath, Suresh, Sumant, Anirudha V., Carpick, Robert W., Hwang, James, Mancini, Derrick C., and Gudeman, Chris. RF-MEMS capacitive switches with high reliability. United States: N. p., 2013. Web.
Goldsmith, Charles L., Auciello, Orlando H., Carlisle, John A., Sampath, Suresh, Sumant, Anirudha V., Carpick, Robert W., Hwang, James, Mancini, Derrick C., & Gudeman, Chris. RF-MEMS capacitive switches with high reliability. United States.
Goldsmith, Charles L., Auciello, Orlando H., Carlisle, John A., Sampath, Suresh, Sumant, Anirudha V., Carpick, Robert W., Hwang, James, Mancini, Derrick C., and Gudeman, Chris. Tue . "RF-MEMS capacitive switches with high reliability". United States. https://www.osti.gov/servlets/purl/1092767.
@article{osti_1092767,
title = {RF-MEMS capacitive switches with high reliability},
author = {Goldsmith, Charles L. and Auciello, Orlando H. and Carlisle, John A. and Sampath, Suresh and Sumant, Anirudha V. and Carpick, Robert W. and Hwang, James and Mancini, Derrick C. and Gudeman, Chris},
abstractNote = {A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a "fast discharge diamond dielectric layer" and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2013},
month = {9}
}

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