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Title: Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

Inventors:
; ;
Issue Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1239661
Patent Number(s):
9,269,519
Application Number:
14/731,830
Assignee:
UChicago Argonne, LLC (Argonne, IL)
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jun 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches. United States: N. p., 2016. Web.
Sumant, Anirudha V., Auciello, Orlando H., & Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches. United States.
Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Tue . "Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches". United States. https://www.osti.gov/servlets/purl/1239661.
@article{osti_1239661,
title = {Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches},
author = {Sumant, Anirudha V. and Auciello, Orlando H. and Mancini, Derrick C.},
abstractNote = {},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2016},
month = {2}
}

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