Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

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Title: Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

Inventors:: Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

Issue Date:: 2016-02-23

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1239661

Patent Number(s):: 9269519

Application Number:: 14/731,830

Assignee:: UChicago Argonne, LLC (Argonne, IL)

Patent Classifications (CPCs):: B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01H - ELECTRIC SWITCHES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
B82Y30/00 - Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y40/00 - Manufacture or treatment of nanostructures

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01H - ELECTRIC SWITCHES
H01H2059/0081 - {with a tapered air-gap between fixed and movable electrodes}
H01H2209/014 - composed of different layers
H01H2209/046 - Properties of the spacer
H01H2209/07 - metallic
H01H2239/004 - High frequency adaptation or shielding
H01H2239/006 - Containing a capacitive switch or usable as such
H01H59/0009 - {making use of micromechanics}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/13 - combined with thin-film or thick-film passive components

H - ELECTRICITY H03 - BASIC ELECTRONIC CIRCUITRY H03K - PULSE TECHNIQUE
H03K17/975 - using a capacitive movable element

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49105 - Switch making

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DOE Contract Number:: AC02-06CH11357

Resource Type:: Patent

Resource Relation:: Patent File Date: 2015 Jun 05

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats


                    Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches.  United States: N. p., 2016. 
        Web.

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                    Sumant, Anirudha V., Auciello, Orlando H., & Mancini, Derrick C. Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches.  United States.

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                    Sumant, Anirudha V., Auciello, Orlando H., and Mancini, Derrick C. Tue .  
        "Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches".  United States.  https://www.osti.gov/servlets/purl/1239661.

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@article{osti_1239661,

  title        = {Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches},

  author       = {Sumant, Anirudha V. and Auciello, Orlando H. and Mancini, Derrick C.},

  abstractNote = {},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2016},

  month        = {2}

}

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Works referenced in this record:

Low Temperature Wafer Level Processing for MEMS Devices
patent-application, February 2011

El-Gamal, Mourad; Lemoine, Dominique; Cicek, Paul-Vahe
US Patent Application 12/922224; 20110027930
URL: https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20110027930

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Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

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An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.
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MEMS structure and a method of fabricating them from ultrananocrystalline diamond films having average grain sizes of less than about 10 nm and feature resolution of less than about one micron . The MEMS structures are made by contacting carbon dimer species with an oxide substrate forming a carbide layer on the surface onto which ultrananocrystalline diamond having average grain sizes of less than about 10 nm is deposited. Thereafter, microfabrication process are used to form a structure of predetermined shape having a feature resolution of less than about one micron.
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Title: Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

Citation Formats

Low Temperature Wafer Level Processing for MEMS Devices patent-application, February 2011

Low Temperature Wafer Level Processing for MEMS Devices
patent-application, February 2011