In-situ observation of chemical vapor deposition of thin SiGe films by optical reflection interferometry

Book · Fri Sep 01 00:00:00 EDT 1995

OSTI ID:99484

Ritter, G; Tillack, B; Weidner, M ^[1]; Boebel, F G; Hertel, B ^[2]

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1. Institute of Semiconductor Physics, Frankfurt (Germany)
2. Fraunhofer Institute IIS, Erlangen (Germany)

Chemical vapor deposition of Si{sub 1{minus}x}Ge{sub x}-films on Si (100) and of polycrystalline Si{sub 1{minus}x}Ge{sub x} layers on SiO{sub 2}-coated substrates have been performed at a pressure of 200 Pa in the temperature range of 500 C--800 C, correspondingly. To observe the growth process and to characterize the growing thin films at deposition conditions an optical reflection interferometer (PYRITTE-RS) has been used. Comparing the data obtained at growth temperature with ex- situ measurements by spectroscopic ellipsometry the temperature dependence of optical constants of SiGe films have been evaluated. the reflectivity measurements during the deposition process allow to study the quality of the heteroepitaxial film, even in the initial stage of epitaxial growth.

• OSTI ID: 99484
• Report Number(s): CONF-941144--; ISBN 1-55899-277-4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DATA ANALYSIS
DIAGNOSTIC TECHNIQUES
ELECTRONIC EQUIPMENT
EPITAXY
EXPERIMENTAL DATA
GERMANIUM SILICIDES
PROCESS CONTROL
REFRACTIVE INDEX
SILICON OXIDES
TEMPERATURE DEPENDENCE
TEMPERATURE MEASUREMENT