Nanocrystalline SiGe films: Structure and properties

Conference · Mon Dec 30 23:00:00 EST 1996

OSTI ID:541085

Edelman, F; Komem, Y ^[1]; Stoelzer, M ^[2]; Werner, P ^[3]; Butz, R ^[4]

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1. Technion-Israel Inst. of Tech., Haifa (Israel). Materials Engineering Faculty
2. Martin-Luther-Univ. Halle-Wittenberg, Halle (Germany)
3. Max-Planck-Inst. fuer Mikrostrukturphysik, Halle (Germany)
4. Forschungszentrum Juelich (Germany). Inst. fuer Schicht- und Ionentechnik

Amorphous (a) Si{sub 1{minus}x}Ge{sub x} films with x = 0.27--0.55 about 200--300 nm thick and highly doped with Ga (1%), were molecular-beam deposited on SiO{sub 2}/Si(001) substrates at room temperature. For crystallization at 600 to 900 C a-Si{sub 1{minus}x}Ge{sub x}/SiO{sub 2}/Si samples were annealed in vacuum at 10{sup {minus}6} Torr. X-ray diffraction and in situ TEM observations revealed a nanocrystalline structure in Si{sub 1{minus}x}Ge{sub x} films with grain size of about 5--20 nm which is 100 times smaller than undoped films. The nanocrystalline Si{sub 1{minus}x}Ge{sub x} films showed a high hole mobility (1 to 100 cm{sup 2}/Vs) and Seebeck coefficient values (5 to 110 {micro}V/K).

• OSTI ID: 541085
• Report Number(s): CONF-960450--; ISBN 0-7803-3179-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
DOPED MATERIALS
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
GALLIUM
GERMANIUM SILICIDES
MICROSTRUCTURE
SOLAR CELLS
THERMOELECTRIC MATERIALS