Oxidation studies of SiGe
We have studied the kinetics and mechanism of oxidation of SiGe alloys deposited epitaxially onto Si substrates by low-temperature chemical vapor deposition. Ge is shown to enhance oxidation rates by a factor of about 3 in the linear regime, and to be completely rejected from the oxide so that it piles up at the SiO/sub 2//SiGe interface. We demonstrate that Ge plays a purely catalytic role, i.e., it enhances the reaction rate while remaining unchanged itself. Electrical properties of the oxides formed under these conditions are presented, as well as microstructures of the oxide/substrate, Ge-enriched/SiGe substrate, and SiGe/Si substrate interfaces, and x-ray photoemission studies of the early stages of oxidation. Possible mechanisms are discussed and compared with oxidation of pure silicon.
- Research Organization:
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
- OSTI ID:
- 6567243
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602 -- Other Materials-- Structure & Phase Studies
360605* -- Materials-- Radiation Effects
ALLOYS
CATALYSIS
CATALYTIC EFFECTS
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTS
EMISSION
FILMS
GERMANIUM
GERMANIUM ALLOYS
GERMANIUM COMPOUNDS
GERMANIUM OXIDES
GERMANIUM SILICIDES
KINETICS
METALS
MICROSTRUCTURE
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOTOEMISSION
PHYSICAL PROPERTIES
REACTION KINETICS
SECONDARY EMISSION
SILICIDES
SILICON ALLOYS
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
THIN FILMS