The pivotal role of oxygen interstitials in the dynamics of growth and movement of germanium nanocrystallites
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journal
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January 2015 |
Influence of Si oxidation methods on the distribution of suboxides at Si/SiO2 interfaces and their band alignment: a synchrotron photoemission study
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journal
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June 2001 |
Comparative Analysis of Growth Rate Enhancement and Ge Redistribution during Silicon-Germanium Oxidation by Rapid Thermal Oxidation
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August 2016 |
Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys
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journal
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April 2010 |
Generalized Gradient Approximation Made Simple
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October 1996 |
Interface reaction kinetics in SiGe oxidation
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December 2019 |
A 90-nm Logic Technology Featuring Strained-Silicon
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journal
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November 2004 |
Kinetics and Energetics of Ge Condensation in SiGe Oxidation
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journal
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October 2015 |
Ge redistribution in SiO 2 /SiGe structures under thermal oxidation: Dynamics and predictions
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journal
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January 2012 |
Diffusion of arsenic in polycrystalline silicon
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May 1982 |
The Diffusion Coefficient of Germanium in Silicon
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August 1982 |
The role of Si interstitials in the migration and growth of Ge nanocrystallites under thermal annealing in an oxidizing ambient
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July 2014 |
Projector augmented-wave method
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December 1994 |
Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors
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February 2007 |
Hybrid functionals based on a screened Coulomb potential
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journal
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May 2003 |
The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation
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April 2013 |
Simultaneous diffusion of Si and Ge in isotopically controlled heterostructures
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October 2008 |
Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation
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February 1989 |
Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires
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journal
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September 2021 |
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous
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journal
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December 2002 |
Oxidation studies of SiGe
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journal
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February 1989 |
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
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journal
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May 2011 |
On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures
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journal
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December 2013 |
Silicon interstitial injection during dry oxidation of SiGe∕Si layers
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journal
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February 2005 |
Use of a buried loop layer as a detector of interstitial flux during oxidation of SiGe heterostructures
- Martin, Thomas P.; Aldridge, Henry L.; Jones, K. S.
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 35, Issue 2
https://doi.org/10.1116/1.4972516
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journal
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December 2016 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range
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journal
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February 2012 |
Effects of Ge concentration on SiGe oxidation behavior
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September 1991 |
The pivotal role of SiO formation in the migration and Ostwald ripening of Ge quantum dots
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September 2014 |
Suboxides at the Si/SiO2 interface: a Si2p core level study with synchrotron radiation
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August 1997 |
‘Symbiotic’ semiconductors: unusual and counter-intuitive Ge/Si/O interactions
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journal
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February 2017 |
Si–Ge interdiffusion under oxidizing conditions in epitaxial SiGe heterostructures with high compressive stress
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journal
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March 2010 |
Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(0≤x≤1) composition
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journal
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December 2008 |
Relation Between Oxidation Rate and Oxidation-Induced Strain at SiO 2 /Si(001) Interfaces during Thermal Oxidation
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journal
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November 2013 |
FinFET/nanowire design for 5nm/3nm technology nodes: Channel cladding and introducing a “bottleneck” shape to remove performance bottleneck
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conference
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February 2017 |
Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET
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conference
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June 2017 |
Residual order in the thermal oxide of a fully strained SiGe alloy on Si
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journal
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January 2010 |
Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs
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August 2009 |
Lateral Ge Diffusion During Oxidation of Si/SiGe Fins
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journal
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March 2017 |
Oxidation of silicon-germanium alloys
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December 1972 |
Photoelectron spectroscopy studies of SiO2/Si interfaces
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journal
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January 2007 |
Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon
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journal
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May 2017 |
High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices
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May 2006 |
Nanoscale, catalytically enhanced local oxidation of silicon-containing layers by ‘burrowing’ Ge quantum dots
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October 2011 |
Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation
- Long, Ethan; Galeckas, Augustinas; Kuznetsov, Andrej Yu
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Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 4
https://doi.org/10.1116/1.4736982
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July 2012 |
Interfacial Diffusion
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January 1988 |
Dopant redistribution during oxidation of SiGe
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February 1989 |
Structure and Dynamics of Ge in the Si–SiO[sub 2] System: Implications for Oxide-Embedded Ge Nanoparticle Formation
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journal
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January 2008 |