Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Turner, Emily M.; Campbell, Quinn; Avci, Ibrahim; Weber, William J.; Lu, Ping; Wang, George T.; Jones, Kevin S.

doi:10.1063/5.0094185

Title: Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Journal Article · Fri Jul 15 00:00:00 EDT 2022 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0094185· OSTI ID:1877177

^[1];

^[2]; Avci, Ibrahim ^[3];

^[4]; Lu, Ping ^[2];

^[2]; Jones, Kevin S. ^[1]

Univ. of Florida, Gainesville, FL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Synopsys, Inc., Mountain View, CA (United States)
Univ. of Tennessee, Knoxville, TN (United States)

Here, the selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si⁺ implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 10¹⁵ ions/cm² 1 MeV Si⁺ implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm³. Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States). Center for Integrated Nanotechnologies (CINT)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program; USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: NA0003525

OSTI ID:: 1877177

Alternate ID(s):: OSTI ID: 1876516

Report Number(s):: SAND2022-9771J; 708388; TRN: US2307582

Journal Information:: Journal of Applied Physics, Vol. 132, Issue 3; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (24)

SiGe/Si heterostructures produced by double-energy Si[sup +] and Ge[sup +], and Ge[sup +] and Ge[sup 2+] ion implantations Xia, Zheng Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 5 https://doi.org/10.1116/1.590246	journal	September 1998
Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates Mochizuki, Shogo; Sakai, Akira; Nakatsuka, Osamu Semiconductor Science and Technology, Vol. 22, Issue 1 https://doi.org/10.1088/0268-1242/22/1/S31	journal	December 2006
Enhancement of irradiation-induced defect production in Si nanowires Hoilijoki, S.; Holmström, E.; Nordlund, K. Journal of Applied Physics, Vol. 110, Issue 4 https://doi.org/10.1063/1.3627234	journal	August 2011
Lattice Dynamics of Silicon with Empirical Many-Body Potentials Cowley, E. Roger Physical Review Letters, Vol. 60, Issue 23 https://doi.org/10.1103/PhysRevLett.60.2379	journal	June 1988
New ion beam materials laboratory for materials modification and irradiation effects research Zhang, Y.; Crespillo, M. L.; Xue, H. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 338 https://doi.org/10.1016/j.nimb.2014.07.028	journal	November 2014
Ion and electron irradiation-induced effects in nanostructured materials Krasheninnikov, A. V.; Nordlund, K. Journal of Applied Physics, Vol. 107, Issue 7 https://doi.org/10.1063/1.3318261	journal	April 2010
Amorphization of Ge and Si nanocrystals embedded in amorphous ${SiO}_{2}$ by ion irradiation Backman, M.; Djurabekova, F.; Pakarinen, O. H. Physical Review B, Vol. 80, Issue 14 https://doi.org/10.1103/PhysRevB.80.144109	journal	October 2009
Molecular-dynamics simulation of amorphous germanium Ding, Kejian; Andersen, Hans C. Physical Review B, Vol. 34, Issue 10 https://doi.org/10.1103/PhysRevB.34.6987	journal	November 1986
2 MeV Si ion implantation damage in relaxed Si1−xGex O'Raifeartaigh, C.; Barklie, R. C.; Nylandsted Larsen, A. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 120, Issue 1-4 https://doi.org/10.1016/S0168-583X(96)00501-0	journal	December 1996
In situ TEM observation of preferential amorphization in single crystal Si nanowire Su, Jiangbin; Zhu, Xianfang Nanotechnology, Vol. 29, Issue 23 https://doi.org/10.1088/1361-6528/aab6eb	journal	April 2018
Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers Simpson, T. W.; Love, D.; Endisch, D. MRS Proceedings, Vol. 373 https://doi.org/10.1557/PROC-373-511	journal	January 1994
Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires Turner, Emily M.; Campbell, Quinn; Pizarro, Joaquín Nano Letters, Vol. 21, Issue 19 https://doi.org/10.1021/acs.nanolett.1c01670	journal	September 2021
Ge segregation at Si-Ge (001) stepped surfaces Karimi, M.; Kaplan, T.; Mostoller, M. Physical Review B, Vol. 47, Issue 15 https://doi.org/10.1103/PhysRevB.47.9931	journal	April 1993
Computer simulation of local order in condensed phases of silicon Stillinger, Frank H.; Weber, Thomas A. Physical Review B, Vol. 31, Issue 8 https://doi.org/10.1103/PhysRevB.31.5262	journal	April 1985
Oxidation studies of SiGe LeGoues, F. K.; Rosenberg, R.; Nguyen, T. Journal of Applied Physics, Vol. 65, Issue 4 https://doi.org/10.1063/1.342945	journal	February 1989
Lateral Ge Diffusion During Oxidation of Si/SiGe Fins Brewer, William M.; Xin, Yan; Hatem, C. Nano Letters, Vol. 17, Issue 4 https://doi.org/10.1021/acs.nanolett.6b04407	journal	March 2017
Oxidation of silicon-germanium alloys Margalit, S.; Bar-Lev, A.; Kuper, A. B. Journal of Crystal Growth, Vol. 17 https://doi.org/10.1016/0022-0248(72)90259-X	journal	December 1972
Wet-chemical etching of FIB lift-out TEM lamellae for damage-free analysis of 3-D nanostructures Turner, Emily M.; Sapkota, Keshab R.; Hatem, Christopher Ultramicroscopy, Vol. 216 https://doi.org/10.1016/j.ultramic.2020.113049	journal	September 2020
Ge concentrations in pile-up layers of sub-100-nm SiGe films for nano-structuring by thermal oxidation Long, Ethan; Galeckas, Augustinas; Kuznetsov, Andrej Yu Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 30, Issue 4 https://doi.org/10.1116/1.4736982	journal	July 2012
Fast Parallel Algorithms for Short-Range Molecular Dynamics Plimpton, Steve Journal of Computational Physics, Vol. 117, Issue 1 https://doi.org/10.1006/jcph.1995.1039	journal	March 1995
Fabrication of amorphous‐crystalline superlattices in GeSi‐Si and GaAs‐AlAs Eaglesham, D. J.; Poate, J. M.; Jacobson, D. C. Applied Physics Letters, Vol. 58, Issue 5 https://doi.org/10.1063/1.104602	journal	February 1991
Excess vacancies in high energy ion implanted SiGe Kögler, R.; Mücklich, A.; Skorupa, W. Journal of Applied Physics, Vol. 101, Issue 3 https://doi.org/10.1063/1.2433122	journal	February 2007
Selective amorphization of ion‐bombarded SiGe strained‐layer superlattices Vos, M.; Wu, C.; Mitchell, I. V. Applied Physics Letters, Vol. 58, Issue 9 https://doi.org/10.1063/1.104488	journal	March 1991
Oxidation of silicon–germanium alloys. I. An experimental study Hellberg, P. -E.; Zhang, S. -L.; d’Heurle, F. M. Journal of Applied Physics, Vol. 82, Issue 11 https://doi.org/10.1063/1.366443	journal	December 1997

Similar Records

Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires

Journal Article · Tue Sep 28 00:00:00 EDT 2021 · Nano Letters · OSTI ID:1877177

Turner, Emily M.; Campbell, Quinn; Pizarro, Joaquín; +6 more

The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins

Journal Article · Wed Jun 15 00:00:00 EDT 2022 · ACS Applied Materials and Interfaces · OSTI ID:1877177

Thornton, Chappel S.; Tuttle, Blair; Turner, Emily; +4 more

Excess vacancies in high energy ion implanted SiGe

Journal Article · Thu Feb 01 00:00:00 EST 2007 · Journal of Applied Physics · OSTI ID:1877177

Koegler, R; Muecklich, A; Skorupa, W; +4 more

Related Subjects

36 MATERIALS SCIENCE
Si/SiGe heterostructure
Molecular dynamics
Ion implantation
Electron-beam lithography
Chemical processes
Nanowires
Transmission electron microscopy
Etching
Monte Carlo methods
Quantum dots

Title: Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Citation Formats

References (24)

Similar Records

Related Subjects