Excess vacancies in high energy ion implanted SiGe

Journal Article · Thu Feb 01 04:00:00 EST 2007 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2433122· OSTI ID:20982669

Koegler, R; Muecklich, A; Skorupa, W; Peeva, A; Kuznetsov, A Yu; Christensen, J S; Svensson, B G ^[1]

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1. Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden (Germany)

Excess vacancies generated by high energy implantation with 1.2 MeV Si{sup +} and 2 MeV Ge{sup +} ions in SiGe were investigated after rapid thermal annealing at 900 degree sign C. Excess vacancies were probed by decoration with Cu and measuring the Cu profile by secondary ion mass spectrometry. Cross section transmission electron microscopy of cleaved specimen enabled to visualize nanocavities resulting from agglomeration of excess vacancies. The ion-induced damage in SiGe increases with increasing Ge fraction of the alloy. The amorphization threshold decreases and the extension of a buried amorphous layer increases for given implantation and annealing conditions. In contrast to ballistic simulations of excess defect generation where perfect local self-annihilation is assumed the concentrations of excess vacancies and excess interstitials in SiGe increase with increasing Ge fraction. The main contribution to the high excess vacancy concentration in SiGe results from the inefficient recombination of vacancies and interstitials. The widely used +1 model describing the ion-induced damage in Si is not valid for SiGe.

• OSTI ID: 20982669
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 101; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGGLOMERATION
AMORPHOUS STATE
ANNEALING
CROSS SECTIONS
GERMANIUM ALLOYS
GERMANIUM IONS
GERMANIUM SILICIDES
INTERSTITIALS
ION BEAMS
ION IMPLANTATION
MASS SPECTRA
MASS SPECTROSCOPY
MEV RANGE 01-10
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SILICON IONS
SIMULATION
TRANSMISSION ELECTRON MICROSCOPY
VACANCIES