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Evidence for the formation of SiGe nanoparticles in Ge-implanted Si3N4

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4977507· OSTI ID:1389239
 [1];  [1];  [1];  [2];  [3]
  1. Australian National Univ., Canberra, ACT (Australia)
  2. Australian Nuclear Science and Technology Organisation (ANSTO), Melbourne, VIC (Australia). Australian Synchrotron
  3. Brookhaven National Lab. (BNL), Upton, NY (United States)
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SiGe nanoparticles were formed in an amorphous Si3N4 matrix by Ge+ ion implantation and thermal annealing. The size of the nanoparticles was determined by transmission electron microscopy and their atomic structure by x-ray absorption spectroscopy. Nanoparticles were observed for excess Ge concentrations in the range from 9 to 12 at. % after annealing at temperatures in the range from 700 to 900 °C. The average nanoparticle size increased with excess Ge concentration and annealing temperature and varied from an average diameter of 1.8±0.2 nm for the lowest concentration and annealing temperature to 3.2±0.5 nm for the highest concentration and annealing temperature. Our study demonstrates that the structural properties of embedded SiGe nanoparticles in amorphous Si3N4 are sensitive to the implantation and post implantation conditions. Furthermore, we demonstrate that ion implantation is a novel pathway to fabricate and control the SiGe nanoparticle structure and potentially useful for future optoelectronic device applications.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
Grant/Contract Number:
SC0012704
OSTI ID:
1389239
Report Number(s):
BNL--114218-2017-JA
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 121; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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