Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires

Turner, Emily M.; Campbell, Quinn; Pizarro, Joaquín; Yang, Hongbin; Sapkota, Keshab R.; Lu, Ping; Baczewski, Andrew D.; Wang, George T.; Jones, Kevin S.

doi:10.1021/acs.nanolett.1c01670

Title: Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires

Journal Article · Tue Sep 28 00:00:00 EDT 2021 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.1c01670· OSTI ID:1827619

^[1];

^[2]; Pizarro, Joaquín ^[3];

^[4];

^[2]; Lu, Ping ^[2]; Baczewski, Andrew D. ^[2];

^[2]; Jones, Kevin S. ^[1]

Univ. of Florida, Gainesville, FL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
University of Cádiz, Puerto Real (Spain)
Rutgers Univ., Piscataway, NJ (United States)

In this work, we demonstrate the ability to fabricate vertically stacked Si quantum dots (QDs) within SiGe nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature dry oxidation of Si/SiGe heterostructure pillars, during which Ge diffuses along the pillars’ sidewalls and encapsulates the Si layers. Continued oxidation results in QDs with sizes dependent on oxidation time. The formation of a Ge-rich shell that encapsulates the Si QDs is observed, a configuration which is confirmed to be thermodynamically favorable with molecular dynamics and density functional theory. The type-II band alignment of the Si dot/SiGe pillar suggests that charge trapping on the Si QDs is possible, and electron energy loss spectra show that a conduction band offset of at least 200 meV is maintained for even the smallest Si QDs. Our approach is compatible with current Si-based manufacturing processes, offering a new avenue for realizing Si QD devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: NA0003525

OSTI ID:: 1827619

Report Number(s):: SAND-2021-12922J; 700962

Journal Information:: Nano Letters, Vol. 21, Issue 19; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires

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