Memory effect in RTCVD epitaxy of Si and SiGe
- Inst. for Semiconductor Physics, Frankfurt (Germany)
In the paper presented the memory effect of boron (B), phosphorus (P), and germanium (Ge) have been studied during the chemical vapor deposition of homoepitaxial Si-films and heteroepitaxial SiGe-layers in different RTCVD equipment. The CVD processes were controlled by surface kinetics on Si substrates from H{sub 2}, SiH{sub 4}, GeH{sub 4}, PH{sub 3}, and B{sub 2}H{sub 6} at the pressure of 2 mbar in the temperature range of 500--700 C. The autodoping effect from the wafer has been separated from the loading effect of the reactor. The memory effect has been shown to be small for Ge in Si and for B in Si and SiGe. However, a remarkable high memory effect has been found for P, especially in SiGe-films. There are different methods reducing the memory effect in RTCVD-reactors. In-situ gas phase etching by HCl or NF{sub 3} gives the best results in the reactors studied here. Based on the obtained results the opportunities and limitations of integrated processing of different Si and SiGe-films (e.g., complete stacks for Si/SiGe-HBT) in the same reaction chamber have been discussed.
- OSTI ID:
- 400685
- Report Number(s):
- CONF-960401--; ISBN 1-55899-332-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
BORANES
BORON ADDITIONS
CHEMICAL VAPOR DEPOSITION
CONTAMINATION
DOPED MATERIALS
ETCHING
EXPERIMENTAL DATA
FURNACES
GERMANIUM ALLOYS
GERMANIUM HYDRIDES
HYDROGEN
ION MICROPROBE ANALYSIS
KINETICS
MASS SPECTROSCOPY
PHOSPHORUS ADDITIONS
PHOSPHORUS HYDRIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SILICON ALLOYS