Ionizing radiation tolerance of high-performance SiGe HBTs grown by UHV/CVD

Journal Article · Thu Nov 30 23:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488750· OSTI ID:203673

Babcock, J A; Cressler, J D; Vempati, L S; Jaeger, R C ^[1]; Clark, S D ^[2]; Harame, D L ^[3]

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1. Auburn Univ., AL (United States)
2. Naval Surface Warfare Center, Crane, IN (United States)
3. IBM Microelectronics Div., Hopewell Junction, NY (United States)

The ionizing radiation tolerance of high-performance SiGe HBTs, grown by UHV/CVD and optimized for 77 K, has been investigated for the first time. Results at both 300 K and 77 K indicate that this SiGe technology is inherently radiation tolerant without additional processing steps. Perimeter-to-area analysis show parallel shifts in the collector and base current density for total radiation doses below 1.0 Mrad(Si). Relatively minor degradation in the current gain characteristics is observed for SiGe HBTs exposed to 1.0 Mrad(Si) of Co{sup 60} gamma radiation, indicating that the technology is robust for many applications requiring a high degree of ionizing radiation tolerance. 1/f noise measurements made pre- and post-radiation show the appearance of a generation-recombination center in some of the SiGe HBTs after a total-dose exposure to 10.0 Mrad(Si).

• OSTI ID: 203673
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHEMICAL VAPOR DEPOSITION
COBALT 60
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GERMANIUM ALLOYS
HETEROJUNCTIONS
IONIZING RADIATIONS
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICON ALLOYS
ULTRAHIGH VACUUM