Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology

Journal Article · Sun Nov 30 23:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.658970· OSTI ID:644191

Roldan, J M; Ansley, W E; Cressler, J D ^[1]; Clark, S D ^[2]; Nguyen-Ngoc, D ^[3]

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1. Auburn Univ., AL (United States). Electrical Engineering Dept.
2. Naval Surface Warfare Center, Crane, IN (United States)
3. IBM Microelectronics, Hopewell Junction, NY (United States)

The effects of 1.0 MeV neutron irradiation on both SiGe heterojunction bipolar transistors (HBTs) and Si CMOS transistors from an advanced ultra high vacuum chemical vapor deposition (UHV/CVD) SiGe BiCMOS technology are examined for the first time over the temperature range of 300K to 84K. Results at 300K indicate that this SiGe technology is robust with respect to neutron radiation. At fluences as high as 10{sup 15} n/cm{sup 2} (1.0 MeV equivalent) the devices exhibited a degradation of less than 30% in peak current gain. The SiGe HBTs maintain a current gain of 60 after 10{sup 15} n/cm{sup 2} at 84K, compared to the Si BJT which degrades with cooling to a current gain of 20 at 84K. The cutoff frequencies of both the Si and SiGe transistors are unaffected by neutron irradiation, and only a slight degradation in the maximum oscillation frequency of the transistors was observed.

• OSTI ID: 644191
• Report Number(s): CONF-970711--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 44; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRICAL PROPERTIES
GERMANIUM ALLOYS
JUNCTION TRANSISTORS
MOS TRANSISTORS
NEUTRONS
PHYSICAL RADIATION EFFECTS
SILICON
SILICON ALLOYS
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K