The effect of proton irradiation on the RF performance of SiGe HBTs

Journal Article · Tue Nov 30 23:00:00 EST 1999 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers)

DOI:https://doi.org/10.1109/23.819144· OSTI ID:20014733

Zhang, S; Niu, G; Cressler, J D; Clark, S D; Ahlgren, D C

The effects of proton irradiation on the RF performance of SiGe Heterojunction Bipolar Transistors (HBTs) are reported in this paper. Frequency response and broadband noise properties are investigated in SiGe HBTs for proton fluences up to 5 x 10{sup 13} p/cm{sup 2}. The current gain in the radio frequency (RF) bias region and the cutoff frequency (f{sub T}) show little degradation at even extreme proton fluence (realistic space fluences are 1--5 x 10{sup 11} p/cm{sup 2}). The slight degradation of NF{sub min} is due to the irradiation-induced increase in the total emitter and base resistance. The associated available gain G{sub A,assoc} at noise matching is 20.2 dB at f = 2 GHz and I{sub C} = 2.6 mA for a proton fluence of 5 x 10{sup 13} p/cm{sup 2}. These results suggest that space-borne RF circuit applications of SiGe HBTs should be robust to proton irradiation.

• Research Organization: Auburn Univ., AL (US)
• OSTI ID: 20014733
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers) Journal Issue: 6Pt1 Vol. 46; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
GERMANIUM SILICIDES
JUNCTION TRANSISTORS
NOISE
PERFORMANCE
PHYSICAL RADIATION EFFECTS
PROTONS
RESPONSE FUNCTIONS
RF SYSTEMS