The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

Journal Article · Fri May 15 04:00:00 EDT 2015 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4915367· OSTI ID:22391695

Prakash, A. P. Gnana,; Praveen, K. C. ^[1]; Pushpa, N. ^[2]; Cressler, John D. ^[3]

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1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India)
2. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore-570025 (India)
3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332 (United States)

The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

• OSTI ID: 22391695
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1661; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COBALT 60
COMPARATIVE EVALUATIONS
ELECTRICAL PROPERTIES
GAMMA RADIATION
GERMANIUM
GERMANIUM SILICIDES
GHZ RANGE
HETEROJUNCTIONS
IRRADIATION
JUNCTION TRANSISTORS
MEV RANGE
PELLETRON ACCELERATORS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
RELIABILITY
SEMICONDUCTOR MATERIALS
SILICON