Crystalline SiGe films grown on Si substrates using laser-assisted plasma-enhanced chemical vapor deposition at low temperature

Journal Article · Mon Aug 27 00:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2779103· OSTI ID:21016113

Lee, C -T; Cheng, J -H; Lee, H -Y ^[1]

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1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China) and Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701 (China)

Compared with conventional plasma-enhanced chemical vapor deposition, laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) can be used to deposit crystalline SiGe films on Si substrates at low temperature. In the LAPECVD system, a CO{sub 2} laser with a wavelength of 10.6 {mu}m was utilized to assist the pyrolytical decomposition of SiH{sub 4} and GeH{sub 4} reactant gases. The resultant Si{sub 0.78}Ge{sub 0.22} films were obtained and verified through the use of the Auger electron spectroscopy measurement. As the diffraction pattern of a glancing incident angle X-ray diffraction measurement had indicated, several significant diffraction peaks corresponding to a diamond-cubic structure at (111) (220), and (311) were clearly observed. Crystalline SiGe films were also identified by the electron diffraction pattern of high-resolution transmission electron microscopy images.

• OSTI ID: 21016113
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
CARBON DIOXIDE LASERS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
DISSOCIATION
ELECTRON DIFFRACTION
GERMANIUM ALLOYS
GERMANIUM HYDRIDES
GERMANIUM SILICIDES
PLASMA
PYROLYSIS
SEMICONDUCTOR MATERIALS
SILANES
SILICON ALLOYS
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION