Highly aligned vertical GaN nanowires using submonolayer metal catalysts
Patent
·
OSTI ID:993133
- Albuquerque, NM
A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- 7,745,315
- Application Number:
- 11/866,684
- OSTI ID:
- 993133
- Country of Publication:
- United States
- Language:
- English
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Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition
|
journal | November 2006 |
Metalorganic Chemical Vapor Deposition Route to GaN Nanowires with Triangular Cross Sections
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Crystallographic alignment of high-density gallium nitride nanowire arrays
|
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