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Method of fabricating vertically aligned group III-V nanowires

Patent ·
OSTI ID:1164348
A top-down method of fabricating vertically aligned Group III-V micro- and nanowires uses a two-step etch process that adds a selective anisotropic wet etch after an initial plasma etch to remove the dry etch damage while enabling micro/nanowires with straight and smooth faceted sidewalls and controllable diameters independent of pitch. The method enables the fabrication of nanowire lasers, LEDs, and solar cells.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-94AL85000
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Number(s):
8,895,337
Application Number:
13/743,433
OSTI ID:
1164348
Country of Publication:
United States
Language:
English

References (8)

Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres journal June 2009
III-nitride core–shell nanowire arrayed solar cells journal April 2012
Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands journal October 2007
Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes journal January 2009
Crystallographic wet chemical etching of GaN journal November 1998
GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength journal January 2008
Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays journal January 2011
High optical quality GaN nanopillar arrays journal January 2005

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