Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Patent · Tue Jan 13 04:00:00 EST 2015

OSTI ID:1167211

Wang, Deli; Soci, Cesare; Bao, Xinyu; Wei, Wei; Jing, Yi; Sun, Ke

Embodiments of the invention provide a method for direct heteroepitaxial growth of vertical III-V semiconductor nanowires on a silicon substrate. The silicon substrate is etched to substantially completely remove native oxide. It is promptly placed in a reaction chamber. The substrate is heated and maintained at a growth temperature. Group III-V precursors are flowed for a growth time. Preferred embodiment vertical Group III-V nanowires on silicon have a core-shell structure, which provides a radial homojunction or heterojunction. A doped nanowire core is surrounded by a shell with complementary doping. Such can provide high optical absorption due to the long optical path in the axial direction of the vertical nanowires, while reducing considerably the distance over which carriers must diffuse before being collected in the radial direction. Alloy composition can also be varied. Radial and axial homojunctions and heterojunctions can be realized. Embodiments provide for flexible Group III-V nanowire structures. An array of Group III-V nanowire structures is embedded in polymer. A fabrication method forms the vertical nanowires on a substrate, e.g., a silicon substrate. Preferably, the nanowires are formed by the preferred methods for fabrication of Group III-V nanowires on silicon. Devices can be formed with core/shell and core/multi-shell nanowires and the devices are released from the substrate upon which the nanowires were formed to create a flexible structure that includes an array of vertical nanowires embedded in polymer.

View Patent

Research Organization:: The Regents of the University of California, Oakland, CA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FG36-08GO18016

Assignee:: The Regents of the University of California (Oakland, CA)

Patent Number(s):: 8,932,940

Application Number:: 13/126,381

OSTI ID:: 1167211

Country of Publication:: United States

Language:: English

References (16)

Manipulations of size and density of self-assembled quantum dots grown by MOVPE Johansson, Jonas; Carlsson, Niclas; Seifert, Werner Physica E: Low-dimensional Systems and Nanostructures, Vol. 2, Issue 1-4, p. 667-671 https://doi.org/10.1016/S1386-9477(98)00136-2	journal	July 1998
Gallium arsenide and other compound semiconductors on silicon Fang, S. F.; Adomi, K.; Iyer, S. Journal of Applied Physics, Vol. 68, Issue 7 https://doi.org/10.1063/1.346284	journal	October 1990
Control of InAs Nanowire Growth Directions on Si Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh Nano Letters, Vol. 8, Issue 10 https://doi.org/10.1021/nl802398j	journal	October 2008
Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires Glas, Frank Physical Review B, Vol. 74, Issue 12 https://doi.org/10.1103/PhysRevB.74.121302	journal	September 2006
Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings Mårtensson, T.; Wagner, J. B.; Hilner, E. Advanced Materials, Vol. 19, Issue 14, p. 1801-1806 https://doi.org/10.1002/adma.200700285	journal	July 2007
Heteroepitaxial Growth of Vertical GaAs Nanowires on Si (111) Substrates by Metal−Organic Chemical Vapor Deposition Bao, Xin-Yu; Soci, Cesare; Susac, Darija Nano Letters, Vol. 8, Issue 11 https://doi.org/10.1021/nl802062y	journal	November 2008
Epitaxial Growth of III-V Nanowires on Group IV Substrates Bakkers, Erik P. A. M.; Borgström, Magnus T.; Verheijen, Marcel A. MRS Bulletin, Vol. 32, Issue 2 https://doi.org/10.1557/mrs2007.43	journal	February 2007
Critical diameter for III-V nanowires grown on lattice-mismatched substrates Chuang, Linus C.; Moewe, Michael; Chase, Chris Applied Physics Letters, Vol. 90, Issue 4 https://doi.org/10.1063/1.2436655	journal	January 2007
Catalyst-free growth of In(As)P nanowires on silicon Mattila, M.; Hakkarainen, T.; Lipsanen, H. Applied Physics Letters, Vol. 89, Issue 6 https://doi.org/10.1063/1.2336599	journal	August 2006
Vapor-liquid-solid mechanism of single crystal growth Wagner, R. S.; Ellis, W. C. Applied Physics Letters, Vol. 4, Issue 5, p. 89-90 https://doi.org/10.1063/1.1753975	journal	March 1964
Au-Free Epitaxial Growth of InAs Nanowires Mandl, Bernhard; Stangl, Julian; Mårtensson, Thomas Nano Letters, Vol. 6, Issue 8 https://doi.org/10.1021/nl060452v	journal	August 2006
Epitaxial III−V Nanowires on Silicon Mårtensson, Thomas; Svensson, C. Patrik T.; Wacaser, Brent A. Nano Letters, Vol. 4, Issue 10 https://doi.org/10.1021/nl0487267	journal	October 2004
Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy Jabeen, Fauzia; Grillo, Vincenzo; Rubini, Silvia Nanotechnology, Vol. 19, Issue 27 https://doi.org/10.1088/0957-4484/19/27/275711	journal	May 2008
Atomic processes in crystal growth Venables, John A. Surface Science, Vol. 299-300, p. 798-817 https://doi.org/10.1016/0039-6028(94)90698-X	journal	January 1994
Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection Wei, Wei; Bao, Xin-Yu; Soci, Cesare Nano Letters, Vol. 9, Issue 8 https://doi.org/10.1021/nl901270n	journal	August 2009
Equilibrium limits of coherency in strained nanowire heterostructures Ertekin, Elif; Greaney, P. A.; Chrzan, D. C. Journal of Applied Physics, Vol. 97, Issue 11 https://doi.org/10.1063/1.1903106	journal	June 2005

Similar Records

Analytical description of the metal-assisted growth of III-V nanowires: Axial and radial growths

Journal Article · Mon Jun 01 00:00:00 EDT 2009 · Journal of Applied Physics · OSTI ID:21352235

Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

Journal Article · Mon Nov 14 23:00:00 EST 2016 · Semiconductors · OSTI ID:22649678

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

Journal Article · Wed Dec 31 23:00:00 EST 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:22318084

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY

Vertical group III-V nanowires on si, heterostructures, flexible arrays and fabrication

Citation Formats

References (16)

Similar Records

Related Subjects