Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Han, Jung; Su, Jie

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Patent · Tue Aug 05 00:00:00 EDT 2008

OSTI ID:985518

Han, Jung ^[1]; Su, Jie ^[2]

Woodbridge, CT
New Haven, CT

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

View Patent

Research Organization:: NETL (National Energy Technology Laboratory, Pittsburgh, PA, and Morgantown, WV (United States))

Sponsoring Organization:: USDOE

DOE Contract Number:: FC26-03NT41941

Assignee:: Yale University (New Haven, CT)

Patent Number(s):: 7,407,872

Application Number:: 11/207,226

OSTI ID:: 985518

Country of Publication:: United States

Language:: English

References (23)

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth Hiramatsu, K.; Nishiyama, K.; Motogaito, A. physica status solidi (a), Vol. 176, Issue 1 https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO;2-I	journal	November 1999
Directed Assembly of One-Dimensional Nanostructures into Functional Networks Huang, Yu; Duan, Xiangfeng; Wei, Qingqiao Science, Vol. 291, Issue 5504, p. 630-633 https://doi.org/10.1126/science.291.5504.630	journal	January 2001
Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures Wu, Yue; Xiang, Jie; Yang, Chen Nature, Vol. 430, Issue 6995, p. 61-65 https://doi.org/10.1038/nature02674	journal	July 2004
Electric-field assisted assembly and alignment of metallic nanowires Smith, Peter A.; Nordquist, Christopher D.; Jackson, Thomas N. Applied Physics Letters, Vol. 77, Issue 9, p. 1399-1401 https://doi.org/10.1063/1.1290272	journal	August 2000
Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices Zhong, Zhaohui; Qian, Fang; Wang, Deli Nano Letters, Vol. 3, Issue 3 https://doi.org/10.1021/nl034003w	journal	March 2003
Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition Su, J.; Cui, G.; Gherasimova, M. Applied Physics Letters, Vol. 86, Issue 1 https://doi.org/10.1063/1.1843281	journal	January 2005
Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition Marchand, H.; Ibbetson, J. P.; Fini, P. T. Journal of Crystal Growth, Vol. 195, Issue 1-4 https://doi.org/10.1016/S0022-0248(98)00591-0	journal	December 1998
Growth and Characterization of GaN Nanowires on Si Substrate Using Ni Catalyst in a Chemical Vapor Deposition Reactor Lee, S. H.; Mo, Y. H.; Nahm, K. S. physica status solidi (c), Vol. 0, Issue 1 https://doi.org/10.1002/pssc.200390010	journal	January 2003
Theory of GaN ( 10 1 ¯ 0 ) and ( 11 2 ¯ 0 ) surfaces Northrup, John E.; Neugebauer, J. Physical Review B, Vol. 53, Issue 16 https://doi.org/10.1103/PhysRevB.53.R10477	journal	April 1996
Large-Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems Whang, Dongmok; Jin, Song; Wu, Yue Nano Letters, Vol. 3, Issue 9, p. 1255-1259 https://doi.org/10.1021/nl0345062	journal	September 2003
Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method Han, Song; Jin, Wu; Tang, Tao Journal of Materials Research, Vol. 18, Issue 2 https://doi.org/10.1557/JMR.2003.0033	journal	February 2003
Role of Surface Diffusion in Chemical Beam Epitaxy of InAs Nanowires Jensen, Linus E.; Björk, Mikael T.; Jeppesen, Sören Nano Letters, Vol. 4, Issue 10 https://doi.org/10.1021/nl048825k	journal	October 2004
Laser-Assisted Catalytic Growth of Single Crystal GaN Nanowires Duan, Xiangfeng; Lieber, Charles M. Journal of the American Chemical Society, Vol. 122, Issue 1 https://doi.org/10.1021/ja993713u	journal	January 2000
Spatial control of InGaN luminescence by MOCVD selective epitaxy Kapolnek, D.; Keller, S.; Underwood, R. D. Journal of Crystal Growth, Vol. 189-190 https://doi.org/10.1016/S0022-0248(98)00176-6	journal	June 1998
General Synthesis of Compound Semiconductor Nanowires Duan, X.; Lieber, C. M. Advanced Materials, Vol. 12, Issue 4, p. 298-302 https://doi.org/10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO;2-Y	journal	February 2000
Mass transport in the epitaxial lateral overgrowth of gallium nitride Mitchell, Christine C.; Coltrin, Michael E.; Han, Jung Journal of Crystal Growth, Vol. 222, Issue 1-2 https://doi.org/10.1016/S0022-0248(00)00874-5	journal	January 2001
Catalytic synthesis and photoluminescence of gallium nitride nanowires Lyu, S. C.; Cha, O. H.; Suh, E. -K. Chemical Physics Letters, Vol. 367, Issue 1-2 https://doi.org/10.1016/S0009-2614(02)01679-2	journal	January 2003
Crystallographic alignment of high-density gallium nitride nanowire arrays Kuykendall, Tevye; Pauzauskie, Peter J.; Zhang, Yanfeng Nature Materials, Vol. 3, Issue 8, p. 524-528 https://doi.org/10.1038/nmat1177	journal	July 2004
Cover Picture: Photolithographic Route to the Fabrication of Micro/Nanowires of III-V Semiconductors (Adv. Funct. Mater. 1/2005) Sun, Y.; Khang, D. -Y.; Hua, F. Advanced Functional Materials, Vol. 15, Issue 1 https://doi.org/10.1002/adfm.200590003	journal	January 2005
Preparation of II-VI group semiconductor nanowire arrays by dc electrochemical deposition in porous aluminum oxide templates Xu, Dongsheng; Chen, Dapeng; Xu, Yajie Pure and Applied Chemistry, Vol. 72, Issue 1-2 https://doi.org/10.1351/pac200072010127	journal	January 2000
A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires Morales, Alfredo M.; Lieber, Charles M. Science, Vol. 279, Issue 5348, p. 208-211 https://doi.org/10.1126/science.279.5348.208	journal	January 1998
Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells Kuokstis, E.; Chen, C. Q.; Gaevski, M. E. Applied Physics Letters, Vol. 81, Issue 22 https://doi.org/10.1063/1.1524298	journal	November 2002
Catalytic Growth and Characterization of Gallium Nitride Nanowires Chen, Chia-Chun; Yeh, Chun-Chia; Chen, Chun-Ho Journal of the American Chemical Society, Vol. 123, Issue 12 https://doi.org/10.1021/ja0040518	journal	March 2001

Similar Records

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Journal Article · Thu Sep 01 00:00:00 EDT 2011 · Journal of Applied Physics · OSTI ID:22038689

Highly aligned vertical GaN nanowires using submonolayer metal catalysts

Patent · Tue Jun 29 00:00:00 EDT 2010 · OSTI ID:993133

Growth kinetics of AlN and GaN films grown by molecular beam epitaxy on R-plane sapphire substrates

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics · OSTI ID:21476421

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
EPITAXY
ISLANDS
NANOSTRUCTURES
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY

Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Citation Formats

References (23)

Similar Records

Related Subjects