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Title: Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

Abstract

Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

Inventors:
 [1];  [2]
  1. Woodbridge, CT
  2. New Haven, CT
Publication Date:
Research Org.:
NETL (National Energy Technology Laboratory, Pittsburgh, PA, and Morgantown, WV (United States))
Sponsoring Org.:
USDOE
OSTI Identifier:
985518
Patent Number(s):
7,407,872
Application Number:
11/207,226; TRN: US201016%%2033
Assignee:
Yale University (New Haven, CT)
DOE Contract Number:  
FC26-03NT41941
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; EPITAXY; ISLANDS; NANOSTRUCTURES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Han, Jung, and Su, Jie. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition. United States: N. p., 2008. Web.
Han, Jung, & Su, Jie. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition. United States.
Han, Jung, and Su, Jie. Tue . "Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition". United States. https://www.osti.gov/servlets/purl/985518.
@article{osti_985518,
title = {Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition},
author = {Han, Jung and Su, Jie},
abstractNote = {Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. <1010> M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.},
doi = {},
url = {https://www.osti.gov/biblio/985518}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2008},
month = {8}
}

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Works referenced in this record:

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