Enhanced Magnetism in Epitaxial SrRuO3 Thin Films
We have observed enhanced magnetization in epitaxial SrRuO{sub 3} thin films compared to previously reported bulk and thin film values of 1.1-1.6 {mu}{sub B}/Ru ion. The degree of enhancement is strongly dependent on the lattice distortions imposed on the SrRuO{sub 3} films by SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrTaO{sub 3}){sub 0.7} (LSAT), and LaAlO{sub 3} substrates. A larger enhancement of magnetization for coherently strained SrRuO{sub 3} films on SrTiO{sub 3} and LSAT compared to fully relaxed films on LaAlO{sub 3} confirms the importance of the strain state in determining the magnetic ground state of the Ru ion. In particular, SrRuO{sub 3} films on (111) SrTiO{sub 3} exhibit exhanced moments as high as 3.8 {mu}{sub B}/Ru ion, thus suggesting the stabilization of a high-spin Ru{sup 4+} state.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Advanced Light Source Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 983177
- Report Number(s):
- LBNL-3307E
- Journal Information:
- APPLIED PHYSICS LETTERS, Journal Name: APPLIED PHYSICS LETTERS Vol. 96; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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