Strain Induced Magnetism in SrRuO3 Epitaxial Thin Films
Journal Article
·
· Journal of Applied Physics
Epitaxial SrRuO{sub 3} thin films were grown on SrTiO{sub 3}, (LaAlO{sub 3}){sub 0.3}(SrAlO{sub 3}){sub 0.7} and LaAlO{sub 3} substrates inducing different biaxial compressive strains. Coherently strained SrRuO{sub 3} films exhibit enhanced magnetization compared to previously reported bulk and thin film values of 1.1-1.6 {micro}{sub B} per formula unit. A comparison of (001) and (110) SrRuO{sub 3} films on each substrate indicates that films on (110) oriented have consistently higher saturated moments than corresponding (001) films. These observations indicate the importance of lattice distortions in controlling the magnetic ground state in this transitional metal oxide.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- Advanced Light Source Division; Materials Sciences Division
- DOE Contract Number:
- AC02-05CH11231
- OSTI ID:
- 983289
- Report Number(s):
- LBNL-3439E
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 107; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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