Effect of domain structure on the magnetoresistance of epitaxial thin films of ferromagnetic metallic oxide SrRuO{sub 3}
- Duke Univ., Durham, NC (United States). Dept. of Mechanical Engineering and Materials Science
The authors have grown epitaxial ferromagnetic metallic oxide SrRuO{sub 3} thin films with different domain structures on (001) LaAlO{sub 3} and miscut (001) SrTiO{sub 3} substrates. The effect of crystallographic domain structures on the magnetization and magnetoresistive behavior of epitaxial SrRuO{sub 3} thin films has been studied. Magnetization measurements on the single domain film on 2{degree} miscut (001) SrTiO{sub 3} substrate showed that the in-plane [{bar 1}10] direction, which is aligned along the miscut direction, is the easier axis for magnetization compared to the [001] direction. This film also showed a strong anisotropic magnetoresistance (AMR) effect of {approximately} 8% in magnitude. In contrast, the SrRuO{sub 3} thin film on (001) LaAlO{sub 3} substrate shows identical magnetization and magnetoresistance behavior in two orthogonal directions on the film due to the presence of 90 domains in the plane. For both the films, large negative magnetoresistance effects ({approximately} 10%) were observed when the current and the applied magnetic field are parallel. The magnetoresistance behavior is explained in terms of suppression of spin fluctuations near {Tc} and the AMR effect.
- Sponsoring Organization:
- Office of Naval Research, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- OSTI ID:
- 323401
- Report Number(s):
- CONF-971201--; ISBN 1-55899-399-1
- Country of Publication:
- United States
- Language:
- English
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