Controlled incorporation of mid-to-high Z transition metals in CVD diamond
Journal Article
·
· Diamond and related materials, vol. 19, no. 5-6, February 22, 2010, pp. 643?647
We report on a general method to fabricate transition metal related defects in diamond. Controlled incorporation of Mo and W in synthetic CVD diamond was achieved by adding volatile metal precursors to the diamond chemical vapor deposition (CVD) growth process. Effects of deposition temperature, grain structure and precursor exposure on the doping level were systematically studied, and doping levels of up to 0.25 at.% have been achieved. The metal atoms are uniformly distributed throughout the diamond grains without any indication of inclusion formation. These results are discussed in context of the kinetically controlled growth process of CVD diamond.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 978419
- Report Number(s):
- LLNL-JRNL-422323
- Journal Information:
- Diamond and related materials, vol. 19, no. 5-6, February 22, 2010, pp. 643?647, Journal Name: Diamond and related materials, vol. 19, no. 5-6, February 22, 2010, pp. 643?647 Journal Issue: 5-6 Vol. 19
- Country of Publication:
- United States
- Language:
- English
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