TEM study of growth defects in CVD diamond films
Conference
·
OSTI ID:82565
- State Univ. of New York, Stony Brook, NY (United States). Dept. of Materials Science and Engineering
- Vactronic Lab. Equipment, Inc., Bohemia, NY (United States)
Transmission electron microscopy (TEM) has been used to examine defects in diamond films grown by the microwave plasma-enhanced chemical vapor deposition (CVD) method. Graphite was used as the sole carbon source during the CVD process with silicon substrates. Growth defects including twins, stacking faults, dislocations and second-phase precipitates were observed in the films. In plan-view TEM, defect clusters at the centers of diamond grains were observed, where the film is also the thickest. Cross-sectional TEM was carried out to show that the defect clusters fan out from a single nucleation site in each grain, at the diamond-silicon interface. Possible growth mechanisms of the defect clusters in diamond grains are considered.
- OSTI ID:
- 82565
- Report Number(s):
- CONF-941144--; ISBN 1-55899-264-2
- Country of Publication:
- United States
- Language:
- English
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