Seeding with purified ultrafine diamond particles for diamond synthesis by CVD
Conference
·
OSTI ID:230066
- Osaka Univ. (Japan); and others
Si substrates were seeded with purified nanocrystal diamond particles about 5 nm in diameter synthesized by the implosion process. Ultra high growing particle densities of diamond more than 5x10{sup 11}cm{sup {minus}2} achieved and continuous diamond films were formed uniformly in 10 min after deposition started by using conventional microwave plasma chemical vapor deposition (CVD) method. Well-faceted diamond films have been fabricated at 200{degrees}C on the Si substrate by the magneto-active microwave plasma CVD method.
- OSTI ID:
- 230066
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nucleation and growth of CVD diamond films on patterned substrates
Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers
Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy
Journal Article
·
Thu Dec 19 23:00:00 EST 2002
· Diamond and Related Materials
·
OSTI ID:823742
Enhancement of the nucleation of smooth and dense nanocrystalline diamond films by using molybdenum seed layers
Journal Article
·
Sun Nov 14 23:00:00 EST 2010
· Journal of Applied Physics
·
OSTI ID:21537932
Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
·
OSTI ID:5228702