Origin of reverse annealing effect in hydrogen-implanted silicon
Journal Article
·
· Physical Review Letters
OSTI ID:971653
- Los Alamos National Laboratory
In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. On the basis of quantitative high resolution transmission electron microscopy combined with channeling Rutherford backscattering analysis, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induce platelets. Platelets are responsible for an increase in the height and width the channeling damage peak following increased isochronal anneals.
- Research Organization:
- Los Alamos National Laboratory (LANL)
- Sponsoring Organization:
- DOE
- DOE Contract Number:
- AC52-06NA25396
- OSTI ID:
- 971653
- Report Number(s):
- LA-UR-09-06461; LA-UR-09-6461
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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