Investigation of ion implantation into high-purity and controllably doped silicon and into gallium arsenide. Final report, January 1982-February 1983
Technical Report
·
OSTI ID:7170546
Data derived from the use of Rutherford backscattering-channelling measurements of disorder production in ion implanted semiconductors for the determination of damage-production mechanisms were analyzed. The redistribution and lattice incorporation of implanted impurities in Si during controlled furnace annealing to reorder the implantation damaged Si were studied. Production of disorder in InP by light- and heavy-ion implantation was investigated as function of implant flux and fluence and implant temperature. Investigation, in parallel with (3) of the damage creation and annealing processes associated with the interaction of the RBS/channeling analysis ion probe with heavy-ion implantation damage in InP is discussed.
- Research Organization:
- Salford Univ. (UK). Dept. of Electrical Engineering
- OSTI ID:
- 7170546
- Report Number(s):
- AD-A-172942/5/XAB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
ELASTIC SCATTERING
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION CHANNELING
ION IMPLANTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
ELASTIC SCATTERING
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPURITIES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION CHANNELING
ION IMPLANTATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON