Dose and doping dependence of damage annealing in Fe MeV implanted InP

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:477445

Carnera, A; Fraboni, B; Gasparotto, A ^[1]; Priolo, F ^[2]; Camporese, A; Rossetto, G ^[3]; Frigeri, C; Cassa, A ^[4]

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1. INFM, Padova (Italy)
2. INFM, Catania (Italy)
3. CNR-ICTIMA, Padova (Italy)
4. CNR-MASPEC, Parma (Italy)

High energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5 {times} 10{sup 13} and 5 {times} 10{sup 14} at/cm{sup 2}. Annealing in the 650--800 C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analyzed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

• OSTI ID: 477445
• Report Number(s): CONF-951155--; ISBN 1-55899-299-5
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL DEFECTS
EXPERIMENTAL DATA
INDIUM PHOSPHIDES
ION IMPLANTATION
IRON IONS
PHYSICAL RADIATION EFFECTS