Thermally stable, buried high-resistance layers in [ital p]-type InP obtained by MeV energy Ti implantation

Journal Article · Tue Jun 01 04:00:00 EDT 1993 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.354011· OSTI ID:6769584

Martin, J M; Nadella, R K; Vellanki, J; Rao, M V ^[1]; Holland, O W ^[2]

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1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

High-energy Ti[sup +] ions ranging from 1 to 5 MeV were implanted into [ital p]-type InP:Zn (for two different zinc concentrations) at both room temperature and 200 [degree]C. The range statistics for Ti implanted at various energies were calculated by analyzing the as-implanted profiles determined by secondary-ion mass spectrometry. Ti did not redistribute during post-implantation annealing except for a slight indiffusion, irrespective of the implant or annealing temperatures used. This behavior is different from the behavior of other implanted transition metals (Fe and Co) in InP, which redistributed highly when the implants were performed at room temperature. In the MeV Ti-implanted InP:Zn the background Zn showed a small degree of redistribution. Rutherford backscattering measurements showed a near virgin lattice perfection for 200 [degree]C implants after annealing. Buried layers with intrinsic resistivity were obtained by MeV Ti implantation in InP:Zn ([ital p]=5[times]10[sup 16] cm[sup [minus]3]).

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6769584
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 73:11; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606 -- Other Materials-- Physical Properties-- (1992-)
665300* -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ANNEALING
CHARGED PARTICLES
CRYSTAL DOPING
ELASTIC SCATTERING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ENERGY RANGE
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
MASS SPECTROSCOPY
MEV RANGE
MEV RANGE 01-10
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RUTHERFORD SCATTERING
SCATTERING
SPECTROSCOPY
TITANIUM IONS
ZINC ADDITIONS
ZINC ALLOYS