MeV B compensation implants into n -type GaAs and InP

Journal Article · Tue Sep 15 04:00:00 EDT 1992 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.351608· OSTI ID:7266441

Nadella, R K; Vellanki, J; Rao, M V ^[1]; Holland, O W ^[2]

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1. Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
2. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

High energy B implantations were performed into {ital n}-type GaAs and InP at room temperature in the range of energies from 1 to 5 MeV and fluences from 10{sup 11} to 10{sup 16} cm{sup {minus}2}. The material did not become amorphous for any of the fluences used. Buried layers with resistivities as high as 10{sup 8} {Omega} cm and 10{sup 6} {Omega} cm were obtained in GaAs and InP, respectively, after heat treatments. The breakdown voltages corresponding to the highest resistivities are 80 and 35 V, respectively, in GaAs and InP. In GaAs, the Rutherford backscattering analysis on the annealed samples showed an aligned yield close to that of a virgin sample, whereas, the yield in InP is more than that of the as-implanted sample.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7266441
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:6; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360600* -- Other Materials
ARSENIC COMPOUNDS
ARSENIDES
BORON IONS
CHARGED PARTICLES
ELASTIC SCATTERING
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION IMPLANTATION
IONS
MATERIALS
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR MATERIALS