Silicon implantation into GaAs: Observations of dose rate dependent electrical activation and damage

Journal Article · Mon Aug 27 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103402· OSTI ID:6519402

Moore, F G; Dietrich, H B; Dobisz, E A ^[1]; Holland, O W ^[2]

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1. Naval Research Laboratory, Washington, DC (USA)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN (USA)

The electrical activation of ion-implanted silicon in GaAs has been studied as a function of dose rate (i.e., ion-current density). For a fluence of 10{sup 14} cm{sup {minus}2}, the Hall sheet carrier activation is shown to depend strongly on the dose rate at which the implant was carried out. Carrier concentrations of 7{times}10{sup 18} cm{sup {minus}3} were produced at a 50{times}10{sup {minus}9} A/cm{sup 2} ion-current density. The variation in electrical activation is believed to be the result of a dose rate dependence of the ion-induced damage of GaAs which can be clearly seen in Rutherford backscattering (RBS) channeling measurements of 10{sup 15} cm{sup {minus}2} implants.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6519402
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:9; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
360605* -- Materials-- Radiation Effects
ACTIVATION ENERGY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
NATIONAL ORGANIZATIONS
ORNL
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMIMETALS
SILICON
US AEC
US DOE
US ERDA
US ORGANIZATIONS