Dose rate effects on damage formation in ion-implanted gallium arsenide

Conference · Sat Sep 01 04:00:00 EDT 1990

OSTI ID:6601713

Haynes, T E; Holland, O W

The residual damage in GaAs was measured by ion channeling following implantation of either 100 keV {sup 30}Si{sup +} at temperatures of 300K or 77K, or 360 keV {sup 120}Sn{sup +} at 300K. For room-temperature Si implants and fluences between 1 and 10 {times} 10{sup 14} Si/cm{sup 2}, the amount of damage created was strongly dependent upon the ion current density, which was varied between 0.05 and 12 {mu}A/cm{sup 2}. Two different stages of damage growth were identified by an abrupt increase in the damage growth rate as a function of fluence, and the threshold fluence for the onset of the second stage was found to be dependent on the dose rate. The dose rate effect on damage was substantially weaker for {sup 120}Sn{sup +} implants and was negligible for Si implants at 77K. The damage was found to be most sensitive to the average current density, demonstrating that the defects which are the precursors to the residual dose-rate dependent damage have active lifetimes of at least 3 {times} 10{sup {minus}4} s. The dose rate effect and its variation with ion mass and temperature are discussed in the context of homogeneous nucleation and growth of damage during ion irradiation.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6601713
• Report Number(s): CONF-900936-9; ON: DE91000394
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
CURRENT DENSITY
DOSE RATES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
ION IMPLANTATION
IONS
PNICTIDES
RADIATION EFFECTS
SILICON IONS
TIN IONS