Influence of low-energy argon implantation on gallium arsenide Schottky barriers

Journal Article · Wed Mar 15 04:00:00 EST 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342801· OSTI ID:6433891

Wang, Y G; Ashok, S

The influence of ion bombardment damage on the properties of Au/GaAs Schottky barriers has been studied with 10-keV Ar implanted into both n-type and p-type GaAs over the dose range 10/sup 12/--10/sup 15/ cm/sup -2/. Electrical characteristics determined over a wide temperature range (77--360 K) reveal a number of phenomena dictating barrier modification and carrier transport across the Au/GaAs interface: Change in Schottky barrier height due to defect levels introduced by ion damage, the very low threshold dose for barrier modification, increased series resistance, and creation of a shunt conducting path. Partial dynamic annealing of defects is also observed under high-temperature (approx. =200 /sup 0/C) implantation.

• Research Organization: Center for Electronic Materials and Processing and Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802
• OSTI ID: 6433891
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INFORMATION
INTERFACES
ION IMPLANTATION
IONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
NUMERICAL DATA
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS