Dose rate effects on damage accumulation in Si sup + -implanted gallium arsenide

Journal Article · Mon Jan 07 04:00:00 EST 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104445· OSTI ID:6257067

Haynes, T E; Holland, O W ^[1]

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1. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (US)

Ion-induced damage accumulation has been measured as a function of ion dose and dose rate following 100 keV Si{sup +} room-temperature implants in GaAs. The dose rate has been found to have a strong effect on the total damage produced in GaAs over a range of dose between 10{sup 14} and 10{sup 15}/cm{sup 2} and implantation current densities from 0.05 to 12 {mu}A/cm{sup 2}. Two distinct stages of damage formation have been identified. At low implantation doses, damage accumulates slowly and tends to saturate at a level of approximately 0.4{times}10{sup 17}defects/cm{sup 2}. However, beyond a threshold dose ({approx}10{sup 14} Si/cm{sup 2}) which decreases with increasing dose rate, damage accumulates rapidly. In the second stage, the onset of which appears to be associated with the formation of more complex damage structures, the total damage and the damage accumulation rate were found to increase with dose rate for a fixed ion dose. For comparison, dose rate effects were also measured in Si and Ge under similar implant conditions and found to be weaker. The results for GaAs are correlated with recent observations of dose-rate-dependent electrical activation in Si-implanted GaAs.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6257067
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:1; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
DAMAGE
DOSES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION CHANNELING
ION IMPLANTATION
IONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DOSES
RADIATION EFFECTS
SILICON IONS
THRESHOLD DOSE