Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si[sup +]

Journal Article · Mon Feb 21 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110928· OSTI ID:5286539

Haynes, T E ^[1]; Morton, R; Lau, S S ^[2]

---

1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6048 (United States)
2. Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093 (United States)

The relationship between implantation damage and electrical activation has been investigated in GaAs implanted with 100-keV [sup 30]Si[sup +] to doses of 5[times]10[sup 13]/cm[sup 2] and 2[times]10[sup 14]/cm[sup 2], using low and moderate beam currents at room temperature (RT) and at slightly elevated temperatures. For a given Si[sup +] dose, the damage, measured by ion channeling immediately after implantation, was varied by more than a factor of 2 over the range of conditions studied. A strong negative correlation was established between this damage and the electrical activation obtained after high-temperature annealing, i.e., an increase in the initial damage led to a decrease in the sheet-carrier concentration. The results demonstrate a scheme for increasing the sheet-carrier concentration beyond that typically obtained for high-dose Si in GaAs, namely, by using a slightly elevated implant temperature ([similar to]90 [degree]C for a beam current of 1 [mu]A/cm[sup 2]). In addition, the initial damage is shown to consist of two components; one that is stable at RT and another that is not. The sheet-carrier concentration was found to be affected only by that component of the damage that is stable at RT, although both components were reduced by increasing the implant temperature or by reducing the dose rate.

• DOE Contract Number: AC05-84OR21400; FG03-84ER45156
• OSTI ID: 5286539
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:8; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
360606 -- Other Materials-- Physical Properties-- (1992-)
ACTIVATION ANALYSIS
ALLOYS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHEMICAL ANALYSIS
CRYSTAL DOPING
DOSE-RESPONSE RELATIONSHIPS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
PHYSICAL PROPERTIES
PNICTIDES
SILICON ADDITIONS
SILICON ALLOYS
TEMPERATURE DEPENDENCE