Pulsed electron-beam annealing of selenium-implanted gallium arsenide

Journal Article · Mon Oct 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91210· OSTI ID:5889635

Inada, T; Tokunaga, K; Taka, S

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm/sup 2/, independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10/sup 19//cm/sup 3/, which is difficult to realize by conventional thermal annealing.

• Research Organization: College of Engineering, Hosei University, Kajino-cho, Kogenei, Tokyo 184, Japan
• OSTI ID: 5889635
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 35:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGE CARRIERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
HEATING
ION IMPLANTATION
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PNICTIDES
PULSES
QUANTITY RATIO
SELENIUM
SEMIMETALS
SUBSTRATES