Enhancement of the donor activity of implanted selenium in GaAs by gallium implantation

Journal Article · Sun Feb 15 04:00:00 EST 1976 · Appl. Phys. Lett., v. 28, no. 4, pp. 226-227

DOI:https://doi.org/10.1063/1.88706· OSTI ID:4086764

Woodcock, J M

n-type doping levels in GaAs up to 5x10$sup 18$ cm$sup -3$ have been obtained by the ion implantation of 400-keV selenium ions at 200 degreeC followed by 360-keV gallium ions at 200 degreeC. This is an order of magnitude above the maximum obtained from the implantation of selenium alone. (AIP)

• Research Organization: Mullard Research Laboratories, Redhill, Surrey, England
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-020878
• OSTI ID: 4086764
• Journal Information: Appl. Phys. Lett., v. 28, no. 4, pp. 226-227, Journal Name: Appl. Phys. Lett., v. 28, no. 4, pp. 226-227; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

*GALLIUM ARSENIDES-- PHYSICAL RADIATION EFFECTS
360605* --Materials--Other Materials--Radiation Effects
CRYSTAL DOPING
DEPTH DOSE DISTRIBUTIONS
DOPED MATERIALS
ENERGY LEVELS
GALLIUM IONS
ION IMPLANTATION
KEV RANGE 100-1000
N50340* --Metals
Ceramics
& Other Materials--Plastics & Other Materials--Radiation Effects
SELENIUM IONS