Deep trap measurement on S$sup +$-implanted layers in GaAs

Journal Article · Thu Apr 01 04:00:00 EST 1976 · Appl. Phys. Lett., v. 28, no. 7, pp. 405-407

OSTI ID:4037468

Yokoyama, N; Ohkawa, S; Sakurai, T; Furuya, T; Ishikawa, H

GaAs substrates were implanted with sulfur at 100, 200, 300 degreeC, and at room temperature and annealed at 800 degreeC with SiO$sub 2$ or Si$sub 3$$N$$sub 4$ protective layers. The density and activation energy of deep traps in the implanted layers were determined from transient capacitance measurements. It is found that implantation at 200 degreeC and annealing with a Si$sub 3$$N$$sub 4$ film as a protective layer yields the lowest trap density in the implanted layer. (AIP)

• Research Organization: Fijitsu Laboratories Limited, 1015, Kamikodanaka, Nakahara-ku, Kawasaki, Japan
• NSA Number: NSA-33-030023
• OSTI ID: 4037468
• Journal Information: Appl. Phys. Lett., v. 28, no. 7, pp. 405-407, Journal Name: Appl. Phys. Lett., v. 28, no. 7, pp. 405-407; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

*GALLIUM ARSENIDES-- PHYSICAL RADIATION EFFECTS
360200* --Materials--Ceramics
Cermets & Refractories
ACTIVATION ENERGY
ANNEALING
CRYSTAL DOPING
EFFICIENCY
ION IMPLANTATION
KEV RANGE 100-1000
N50100* --Metals
Ceramics
& Other Materials--Ceramics & Cermets
PROTECTIVE COATINGS
SCHOTTKY BARRIER DIODES
SILICON NITRIDES
SILICON OXIDES
SULFUR IONS
TEMPERATURE DEPENDENCE
TRAPS