Deep levels in semi-insulating LEC GaAs before and after silicon implantation
The deep trapping levels present before ion implantation of silicon into the semi-insulating LEC GaAs starting material were investigated using optical transient current spectroscopy (OTCS). MESFET channel current deep level transient spectroscopy (DLTS) was used for the implanted material. With a silicon nitride layer used t encapsulate the GaAs for postimplantation annealing and with implantation directly into the GaAs, it was found tha of seven or more deep levels seen in the semi-insulating substrate prior to silicon implantation only the level believed to be EL12 remained. On implanting through a thin Si/sub 3/N/sub 4/ encapsulating layer and annealing under Si/sub 3/N/sub 4/, only EL2 was found. With a silicon dioxide layer as an encapsulant, two traps remained and two apparently unreported levels appeared.
- Research Organization:
- Department of Electrical Engineering, University of British Columbia, Vancouver, British Columbia
- OSTI ID:
- 5953863
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:11; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTION KINETICS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
KINETICS
LAYERS
MEASURING METHODS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
REACTION KINETICS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES