Variation of deep electron traps created by. gamma. irradiation of GaAs

Journal Article · Wed Oct 31 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.346168· OSTI ID:6082619

Hashizume, T ^[1]; Hasegawa, H ^[2]

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1. Hokkaido Polytechnic College, Zenibako 3-190, Otaru 047-02 (Japan)
2. Faculty of Engineering, Hokkaido University, Kita-13 Nishi-8, Kitaku, Sapporo 060 (Japan)

The effect of {gamma} irradiation on deep electron states in liquid encapsulated Czochralski (LEC) grown GaAs has been investigated by deep-level transient spectroscopy (DLTS) and photocapacitance measurements. With {gamma} rays of 2{times}10{sup 8} R, EL6 was reduced in concentration by a factor of 3--5, whereas EL3 was increased about one order of magnitude, as compared with those in as-grown material. In addition to {ital E} traps that were previously reported in electron-irradiated material, two new traps were observed near the surface region. From their concentration profiles and annealing behavior, the new traps were most likely created by the interaction of the primary irradiation-induced defects with the grown-in defects. In contrast to these results, neither the DLTS spectrum nor the metastable behavior of EL2 was affected by {gamma} irradiation.

• OSTI ID: 6082619
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:9; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTROMAGNETIC RADIATION
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
IONIZING RADIATIONS
NEUTRAL-PARTICLE TRANSPORT
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
RADIATIONS
SPECTROSCOPY
TRAPS