Activation-efficiency modeling of silicon-ion implantation in undoped, LEC-grown GaAs

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5682629

Bindal, A

Constructing an accurate GaAs MESFET modeling largely depends on a complete understanding of material properties by various characterization technique sand being able to obtain reproducible device parameters. In this work, the implanted material was evaluated with respect to various implantation and annealing conditions in detail. In investigating the activation efficiency of implanted silicon in LEC-grown GaAs, atomic and carrier distributions of the implant were obtained using Secondary Ion Mass Spectroscopy (SIMS), the conventional and steo-etch C-V techniques, respectively. Based on these experimental observations, the Si activation efficiency is found to be strong functions of the implantation fluence and annealing temperature, and weak functions of the implantation energy and annealing time. In understanding the effects of various implantation and annealing conditions on Si activation, the second part of this work is devoted to Photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS) experiments. The shallow defects were investigated by photoluminescence experiments.

• Research Organization: California Univ., Los Angeles, CA (USA)
• OSTI ID: 5682629
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CONSTRUCTION
EFFICIENCY
ENERGY DEPENDENCE
ENERGY-LEVEL TRANSITIONS
EXCITATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
PNICTIDES
SEMICONDUCTOR DEVICES
SILICON IONS
SPECTROSCOPY
TRANSISTORS