Double-layered encapsulant for annealing ion-implanted GaAs up to 1100 degreeC
Journal Article
·
· Appl. Phys. Lett.; (United States)
A double-layered encapsulation consisting of a 1000-A plasma-deposited Si/sub 3/N/sub 4/ layer under a 3000-A CVD SiO/sub 2/ layer doped with arsenic has been used to anneal selenium ion-implanted GaAs at temperatures up to 1100 degreeC with no signs of mechanical failure when examined with a scanning electron microscope. Significant improvement in electrical activation of implanted layers over simple Si/sub 3/N/sub 4/ layer caps has also been observed at lower temperatures.
- Research Organization:
- Stanford University, Stanford, California 94305
- OSTI ID:
- 7215683
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 31:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIC IONS
ARSENIDES
ATOMIC IONS
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
DOPED MATERIALS
DOSE-RESPONSE RELATIONSHIPS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTECTIVE COATINGS
RADIATION EFFECTS
SELENIUM IONS
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SURFACE COATING
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIC IONS
ARSENIDES
ATOMIC IONS
CHALCOGENIDES
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
DEPOSITION
DOPED MATERIALS
DOSE-RESPONSE RELATIONSHIPS
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTECTIVE COATINGS
RADIATION EFFECTS
SELENIUM IONS
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SURFACE COATING