The effect of the anneal ambient on implanted GaAs and the occurrence of compensated regions in Si implants

Journal Article · Fri Apr 15 04:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89435· OSTI ID:7230784

Antell, G R

It has been shown that the ease with which Ga can diffuse through an SiO/sub 2/ film on a Si-ion-implanted sample of GaAs can be used to advantage to change the stoichiometry of the sample by annealing in an ambient consisting of H/sub 2/+HCl+GaCl. The use of the same ambient with a Se-implanted sample leads to a reduction in both the mobility and the degree of activation. Both bulk and epitaxial samples which had been coated with either SiO/sub 2/ or Si/sub 3/N/sub 4/ and implanted to 10/sup 15/ cm/sup -2/ with 400-keV Si ions were found to contain compensated or p-type regions after annealing at 900 degreeC. A model is suggested to account for this effect.

• Research Organization: Standard Telecommunication Laboratories, Harlow, Essex, England
• OSTI ID: 7230784
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 30:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CARRIER MOBILITY
CHARGED PARTICLES
CHLORIDES
CHLORINE COMPOUNDS
CRYOGENIC FLUIDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY RANGE
FLUIDS
GALLIUM ARSENIDES
GALLIUM CHLORIDES
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
HYDROCHLORIC ACID
HYDROGEN
HYDROGEN COMPOUNDS
INORGANIC ACIDS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 100-1000
MOBILITY
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
POINT DEFECTS
SILICON IONS
VACANCIES