Electrical properties of Te-implanted GaAs
Tellurium was implanted into Cr-doped GaAs at 250 degreeC to a dose of 10/sup 13/ or 10/sup 14/ Te/cm/sup 2/ at 120 keV. Sheet-resistivity and Hall-effect measurements were made on the samples for annealing temperatures up to 900 degreeC. From the temperature dependence of the sheet resistivity, the conduction mechanism of as-implanted samples was found to be due to thermally assisted tunneling in disordered semiconductors. The very small activation energy of <0.1 meV obtained from the sheet-resistivity curves for isochronal annealing temperatures of approximately-less-than200 degreeC indicates that formation of an amorphous layer has been prevented and that the samples have undergone no epitaxial recrystallization. Annealing at > or =600 degreeC produced n-type conductivity with the maximum effective bulk concentration being approx.10/sup 18/ electrons/cm/sup 3/ for the 10/sup 14/ Te/cm/sup 2/ sample annealed at 800 degreeC. However, the electrical compensation remained high (N/subA//N/subD/ approx. =0.6) for annealing temperatures ranging from 600 to 900 degreeC, the compensating centers being of the V/sub Ga/Te-complex type. The temperature dependence of the electrical characteristics for well-annealed samples resembled that of bulk material. However, a somewhat larger value of donor ionization energy (approx.7 meV) was obtained for the 10/sup 13/ Te/cm/sup 2/ sample annealed at 800 degreeC; this value may arise from the profiling effects. (AIP)
- Research Organization:
- Systems Research Laboratories, Inc., 2800 Indian Ripple Road, Dayton, Ohio 45440
- OSTI ID:
- 7358981
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:7; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CARRIER DENSITY
CHARGED PARTICLES
DOPED MATERIALS
DOSE-RESPONSE RELATIONSHIPS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
ION IMPLANTATION
IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TELLURIUM IONS
TEMPERATURE DEPENDENCE