Evidence of a thermally stable carbon-nitrogen deep level in carbon-doped, nitrogen-implanted, GaAs and AlGaAs

Journal Article · Sat Dec 31 23:00:00 EST 1994 · Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)

DOI:https://doi.org/10.1007/BF02659721· OSTI ID:6605594

Zolper, J C; Sherwin, M E; Baca, A G; Schneider, Jr, R P ^[1]

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1. Sandia National Lab., Albuquerque, NM (United States)

Nitrogen ion implantation is shown to form high resistivity regions ([rho][sub s] [>=] 1 [times] 10[sup 10] [Omega]/[open square]) in C-doped GaAs and Al[sub 0.35]Ga[sub 0.60]As that remains compensated after a 900[degrees]C anneal. This is in contrast to oxygen or fluorine implantation in C-doped GaAs which both recover the initial conductivity after a sufficiently high temperature anneal (800[degrees]C for F and 900[degrees]C for O). In C-doped Al[sub 0.35]Ga[sub 0.65]As N- and O-implant isolation is thermally stable but F-implanted samples regain the initial conductivity after a 700[degrees]C anneal. A dose dependence is observed for the formation of thermally stable N-implant compensation for both the GaAs and AlGaAs samples. A C-N complex is suggested as the source of the compensating defect level for the N-implanted samples. Sheet resistance data vs anneal temperature and estimates of the depth of the defect levels are reported. This result will have application to heterojunction bipolar transistors and complementary heterostructure field effect transistor technologies that employ C-doped AlGaAs or GaAs layers along with high temperature post-implant isolation processing. 14 refs., 4 figs.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 6605594
• Journal Information: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Journal Name: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States) Vol. 24:1; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360606 -- Other Materials-- Physical Properties-- (1992-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CHARGED PARTICLES
DOPED MATERIALS
ELEMENTS
FLUORINE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALOGENS
HEAT TREATMENTS
HETEROJUNCTIONS
ION IMPLANTATION
IONS
JUNCTIONS
MATERIALS
NITROGEN IONS
NONMETALS
OXYGEN
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
TRANSISTORS