Carbon-ion-implanted gallium arsenide

Journal Article · Fri Oct 01 00:00:00 EDT 1976 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89111· OSTI ID:7358973

Shin, B K

Sheet-resistivity and Hall-effect measurements were made on C-ion-implanted GaAs after annealings at 600, 700, 800, or 900/sup 0/C. A doping efficiency of up to 50% was obtained in the 900/sup 0/C-annealed sample which is much higher than the 2--8% reported previously. The electrical profile of this sample indicated that most of the implanted C became substitutional. The electrical compensation level, on the other hand, remained relatively high (0.3--0.6) throughout the profiling range and is responsible for the low doping efficiency obtained in the C-implanted p-type GaAs. (AIP)

• Research Organization: Systems Research Laboratories, Inc., 2800 Indian Ripple Road, Dayton, Ohio 45440
• OSTI ID: 7358973
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 29:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CARBON IONS
CARRIER MOBILITY
CHARGED PARTICLES
CRYSTAL DOPING
DOSE-RESPONSE RELATIONSHIPS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
HEAT TREATMENTS
ION IMPLANTATION
IONS
MOBILITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS