Hall-effect measurements in Cd-implanted GaAs

Journal Article · Wed Mar 31 23:00:00 EST 1976 · J. Appl. Phys., v. 47, no. 4, pp. 1574-1579

DOI:https://doi.org/10.1063/1.322772· OSTI ID:4035353

Shin, B K; Look, D C; Park, Y S; Ehret, J E

Cadmium ions were implanted in GaAs crystals at 135 keV to doses ranging from 10$sup 12$ to 10$sup 16$ ion/cm$sup 2$ at room temperature. Sheet- resistivity and Hall-effect measurements were carried out as a function of temperature, 4.2 to 300 $sup 0$K, after annealings at 700, 800, or 900$sup 0$C in an Ar ambient. The sample surfaces were protected with pyrolytically deposited Si$sub 3$$N$$sub 4$. Significant p-type conduction was observed when samples with doses approximately greater than 10$sup 13$ cm$sup -2$ were annealed at 700$sup 0$C. For doses below 10$sup 14$ cm$sup -2$ nearly complete electrical activity was attained after an 800 to 900$sup 0$C anneal. The Cd profiles were determined by differential Hall-effect measurements in conjunction with the acid-etch layer- removal technique. Above about 800$sup 0$C diffusion becomes important and significantly flattens the implantation profile.

• Research Organization: Systems Research Laboratories, Incorporated, 2800 Indian Ripple Road, Dayton, Ohio 45440
• Sponsoring Organization: USDOE
• NSA Number: NSA-33-030286
• OSTI ID: 4035353
• Journal Information: J. Appl. Phys., v. 47, no. 4, pp. 1574-1579, Journal Name: J. Appl. Phys., v. 47, no. 4, pp. 1574-1579; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

*GALLIUM ARSENIDES-- PHYSICAL RADIATION EFFECTS
360106* --Materials--Metals & Alloys--Radiation Effects
ANNEALING
CADMIUM IONS
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
DOSE-RESPONSE RELATIONSHIPS
ELECTRIC CONDUCTIVITY
HALL EFFECT
ION IMPLANTATION
KEV RANGE 100-1000
N50240* --Metals
Ceramics
& Other Materials--Metals & Alloys--Radiation Effects
SILICON NITRIDES
SURFACE COATING
TEMPERATURE DEPENDENCE