Silicon implantation in GaAs
The electrical properties of room-temperature Si implants in GaAs have been studied. The implantations were done at 300 keV with doses ranging from 1.7 x 10/sup 13/ to 1.7 x 10/sup 15/ cm/sup -2/. The implanted samples were annealed with silicon nitride encapsulants in H/sub 2/ atmosphere for 30 min at temperatures ranging from 800 to 900/sup 0/C to electrically activate the implanted ions. Results show that the implanted layers are n type, which implies that the Si ions preferentially go into Ga sites substitutionally. For low-dose implants, high (approx.90%) electrical activation of the implanted ions is achieved and the depth distribution of the free-electron concentration in the implanted layer roughly follows a Gaussian. However, for high-dose implants, the activation is poor (<15% for a 900 /sup 0/C anneal) and the electron concentration profile is flat and deeper than the expected range.
- Research Organization:
- California Institute of Technology, Pasadena, California 91125
- OSTI ID:
- 6782862
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:2; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CHARGED PARTICLES
DEPTH DOSE DISTRIBUTIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MOBILITY
NITRIDES
NITROGEN COMPOUNDS
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
SILICON COMPOUNDS
SILICON IONS
SILICON NITRIDES
SPATIAL DOSE DISTRIBUTIONS